| PART |
Description |
Maker |
| TGF2022-24 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-08 |
DC - 12 GHz Discrete power pHEMT
|
MACOM[Tyco Electronics]
|
| TGF2022-12 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2022-48 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF4230-SCC |
DC - 12 GHz Discrete HFET
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| AGR18125E AGR18125EF AGR18125EU |
125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AWB7128 AWB7128P8 |
2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
